unisonic technologies co., ltd ut3p06 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r502-673.b 3a, 60v (d-s) p-channel power mosfet ? description the utc ut3p06 is a p-channel enhancement power mosfet using utc?s advanced technology to provide the customers with perfect r ds(on) and low gate charge. this utc ut3p06 can be operated with -4.5v low gate voltage. ? features * r ds(on) =0.19 ? @ v gs =-10v, r ds(on) =0.265 ? @ v gs =-4.5v * low gate charge (typically 7nc) ? symbol (3)gate (4)source (1)(2)(5)(6) drain ? ordering information ordering number package pin assignment packing lead free halogen free 1, 2, 5, 6 3 4 ut3p06l-ag6-r UT3P06G-AG6-R sot-26 d g s tape reel note: pin assignment: g: gate d: drain s: source ? marking
ut3p06 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-673.b ? absolute maximum ratings (t a =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -60 v gate-source voltage v gss 20 v drain current continuous i d -3 a pulsed i dm -10 a avalanche current (l=0.1mh) i ar -7 a power dissipation (note 1, 2) p d 3.5 w junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. surface mounted on fr4 board. 3. t 5 sec ? thermal data parameter symbol ratings unit junction to ambient (note 1,2) ja 62.5 c/w junction to case jc 35 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =-250a, v ds =0v -60 v drain-source leakage current i dss v ds =-48v, v gs =0v -1 a v ds =-48v, v gs =0v , t j =150c -50 gate- source leakage current forward i gss v gs =+20v, v ds =0v +100 na reverse v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =-250a -1 v static drain-source on-state resistance (note 1) r ds(on) v gs =-10v, i d =-3a 190 220 m ? v gs =-4.5v, i d =-1.9a 265 310 on state drain current (note 1) i d ( on ) v gs =-10v, v ds =-5v -10 a switching parameters (note 2) total gate charge q g v gs =-10v, v ds =-30v, i d =-3a 7 14 nc gate to source charge q gs 1.6 nc gate to drain charge q gd 1.2 nc turn-on delay time t d ( on ) v dd =-30v, v gen =-10v, i d =-1a, r l =30 ? , r g =6 ? 8 16 ns rise time t r 12 24 ns turn-off delay time t d ( off ) 23 45 ns fall-time t f 12 25 ns source- drain diode ratings and characteristics (note 2) maximum body-diode continuous current i s -1.7a maximum body-diode pulsed current i sm -10 a drain-source diode forward voltage v sd i s =-3a, v gs =0v (note 1) -0.8 -1.2 v notes: 1. pulse test: pulse width 300s, duty cycle 2%. 2. guaranteed by design, not subject to production testing.
ut3p06 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-673.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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